Title :
Semi-insulating buried heterostructure side-injection light-controlled bistable laser diode
Author :
Tadokoro, Takashi ; Kobayashi, Fumihiko ; Kishi, Kenji ; Nonaka, Kouji ; Amano, Chikara ; Itoh, Yoshio ; Mori, Hidefumi ; Kurokawa, Takashi
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
Abstract :
We demonstrate, for the first time, optical response of a side-injection light-controlled bistable laser diode (SILC-BLD) buried with semi-insulating InP using hydride vapor phase epitaxy (HVPE). The buried surface around both the <110> and <-110> oriented mesas is flat. The bistable operation is obtained by applying control voltage to the saturable absorption region. The modulation bandwidth, f/sub 3dB/, for the injected optical signal is over 3.5 GHz.
Keywords :
electro-optical modulation; optical bistability; optical saturable absorption; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; 3.5 GHz; InP; MQW wafer; SILC-BLD; bistable operation; buried surface; control voltage; hydride vapor phase epitaxy; injected optical signal; modulation bandwidth; optical response; saturable absorption region; semi-insulating InP; semi-insulating buried heterostructure LD; side-injection light-controlled bistable laser diode; Absorption; Bandwidth; Diode lasers; Indium phosphide; Laser noise; Optical bistability; Optical wavelength conversion; Particle beam optics; Surface emitting lasers; Voltage control;
Conference_Titel :
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location :
Haifa, Israel
Print_ISBN :
0-7803-3163-X
DOI :
10.1109/ISLC.1996.553735
