A successive approximation based process-invariant ring oscillator

Author

Zhang, Xuan ; Dokania, Rajeev ; Mukadam, Mustansir ; Apsel, Alyssa

Author_Institution

Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA

fYear

2010

fDate

May 30 2010-June 2 2010

Firstpage

1057

Lastpage

1060

Abstract

In this paper, we present a successive approximation based compensation scheme to minimize the process and temperature induced variation in a ring oscillator topology. This scheme is able to reduce the standard deviation of the oscillation frequency to less than 2%, as compared to more than 9.3% in a typical uncompensated ring oscillator implemented in 65 nm CMOS process. The improved variation performance of the proposed scheme is supported by simulation results over a wide frequency range and under different process and temperature conditions in 65 nm technology.

Keywords

CMOS analogue integrated circuits; approximation theory; compensation; network topology; oscillators; CMOS process; approximation-based process-invariant ring oscillator; compensation scheme; oscillation frequency; size 65 nm; temperature-induced variation; CMOS process; CMOS technology; Circuits; Frequency conversion; Ring oscillators; Sensor systems; Temperature distribution; Topology; Voltage control; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on

Conference_Location

Paris

Print_ISBN

978-1-4244-5308-5

Electronic_ISBN

978-1-4244-5309-2

Type

conf

DOI

10.1109/ISCAS.2010.5537350

Filename

5537350