Interface trap induced drain leakage current in various n-MOSFET structures

Author

Chang, Tse-En ; Wang, Tahui ; Huang, Chimoon

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

1995

fDate

31 May-2 Jun 1995

Firstpage

291

Lastpage

294

Abstract

Dominant drain leakage current mechanisms related to hot carrier stress generated interface traps are characterized in various n-MOSFET structures. Our study reveals that the lateral field induced band-trap-band tunneling is primarily responsible for an increased drain leakage current after hot carrier stress in an LDD MOSFET while the vertical field enhanced tunneling is a dominant leakage mechanism in a S/D conventional MOSFET structure

Keywords

MOSFET; electron traps; hot carriers; interface states; leakage currents; tunnelling; LDD MOSFET; S/D MOSFET; band-trap-band tunneling; drain leakage current; hot carrier stress; interface trap; lateral field; n-MOSFET; vertical field; Charge carrier processes; Current measurement; Electron emission; Electron traps; Hot carriers; Leakage current; MOSFET circuits; Thermal stresses; Thermionic emission; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 1995. Proceedings of Technical Papers. 1995 International Symposium on

Conference_Location

Taipei

ISSN

1524-766X

Print_ISBN

0-7803-2773-X

Type

conf

DOI

10.1109/VTSA.1995.524706

Filename

524706

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3378190