Title :
Interface trap induced drain leakage current in various n-MOSFET structures
Author :
Chang, Tse-En ; Wang, Tahui ; Huang, Chimoon
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
31 May-2 Jun 1995
Abstract :
Dominant drain leakage current mechanisms related to hot carrier stress generated interface traps are characterized in various n-MOSFET structures. Our study reveals that the lateral field induced band-trap-band tunneling is primarily responsible for an increased drain leakage current after hot carrier stress in an LDD MOSFET while the vertical field enhanced tunneling is a dominant leakage mechanism in a S/D conventional MOSFET structure
Keywords :
MOSFET; electron traps; hot carriers; interface states; leakage currents; tunnelling; LDD MOSFET; S/D MOSFET; band-trap-band tunneling; drain leakage current; hot carrier stress; interface trap; lateral field; n-MOSFET; vertical field; Charge carrier processes; Current measurement; Electron emission; Electron traps; Hot carriers; Leakage current; MOSFET circuits; Thermal stresses; Thermionic emission; Tunneling;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1995. Proceedings of Technical Papers. 1995 International Symposium on
Conference_Location :
Taipei
Print_ISBN :
0-7803-2773-X
DOI :
10.1109/VTSA.1995.524706
