Design of extra-low power consumption readout amplifiers for terahertz matrix receivers, bolometer arrays and qubits below 1 K

According to the approach based on the use of unsaturated transistor regime, the concept of low-noise amplifier on commercially available PHEMTs is proposed. It has been found that the power consumption of a few microwatts can be achieved at frequencies of hundreds MHz. The power consumption as low as about 3 microwatts for two-stage amplifier (20 dB gain) was obtained at 300 mK ambient temperature. This is at least an order of magnitude better than the figures known up to date. It is conclude that the GaAs PHEMT and relevant circuitry are an adequate electronics for the ultra-low-temperature readout amplifiers, especially for multi-canal cryoelectronics (such as bolometer arrays, SIS matrixes etc.), when the power consumption budget is critical requirement for the system.