Title :
Combination of a 4H-SiC MESFET with a 4H-SiC MOSFET to realize a high voltage MOSFET
Author :
Moghadam, H.A. ; Mahabadi, S. E. Jamali ; Rajabi, Saba
Author_Institution :
Dept. of Electr. Eng., Islamic Azad Univ., Bojnourd, Iran
Abstract :
In this paper we propose for the first time a novel 4H-SiC MOSFET in order to increase breakdown voltage. Key idea in this work is to utilize better reduced surface field (RESURF) by combination the good features of a buried gate MESFET with a conventional MOSFET. Therefore proposed structure is called MES-MOSFET structure. The simulation results show that breakdown voltage can be enhanced about 3.7 times compared to conventional structure.
Keywords :
Schottky gate field effect transistors; power MOSFET; semiconductor device breakdown; silicon compounds; wide band gap semiconductors; MES-MOSFET structure; RESURF; SiC; breakdown voltage; buried gate MESFET; high voltage MOSFET; reduced surface field; Analytical models; Logic gates; MESFETs; Power MOSFET; Reliability; High voltage; MESFET; MOSFET; RESURF;
Conference_Titel :
Signal Processing, Communication, Computing and Networking Technologies (ICSCCN), 2011 International Conference on
Conference_Location :
Thuckafay
Print_ISBN :
978-1-61284-654-5
DOI :
10.1109/ICSCCN.2011.6024537
