• DocumentCode
    3378315
  • Title

    Monte Carlo simulations of carrier transport in AlGaInP laser diodes

  • Author

    Crow, G.C. ; Abram, R.A.

  • Author_Institution
    Dept. of Phys., Durham Univ., UK
  • fYear
    1996
  • fDate
    13-18 Oct. 1996
  • Firstpage
    35
  • Lastpage
    36
  • Abstract
    A self-consistent ensemble Monte Carlo simulation of charge transport in AlGaInP multiple quantum well lasers has been devised in an effort to understand why the light output from these lasers is reduced at high temperatures.
  • Keywords
    III-V semiconductors; Monte Carlo methods; aluminium compounds; electron-hole recombination; gallium compounds; quantum well lasers; semiconductor device models; AlGaInP; AlGaInP laser diodes; AlGaInP multiple quantum well lasers; Monte Carlo simulations; carrier transport; high temperatures; light output; self-consistent ensemble Monte Carlo simulation; Carrier confinement; Charge carrier processes; Diode lasers; Electron emission; Electron optics; Laser modes; Optical scattering; Quantum well lasers; Stimulated emission; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 1996., 15th IEEE International
  • Conference_Location
    Haifa, Israel
  • Print_ISBN
    0-7803-3163-X
  • Type

    conf

  • DOI
    10.1109/ISLC.1996.553736
  • Filename
    553736
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3378315