Modeling and Test of Nanostructure Fabricated on 160 nm Thin SOI Wafer for In-Ic Integration

In this article we present a complete study of a mechanical nanostructure of the kind of accelerometer. Our models include in particular impact of submicron phenomena such Casimir force considering conductivity of silicon, thickness and roughness of the NEMS. We use these new results to simulate the static and dynamic behavior of on the nano accelerometer like specific design. We fabricated a NEMS demonstrator and performed first electrical measurements that we compared to our model.