DocumentCode
3378558
Title
Design method and test structure to characterize and repair TSV defect induced signal degradation in 3D system
Author
Cho, Minki ; Liu, Chang ; Kim, Dae Hyun ; Lim, Sung Kyu ; Mukhopadhyay, Saibal
Author_Institution
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear
2010
fDate
7-11 Nov. 2010
Firstpage
694
Lastpage
697
Abstract
In this paper we present a test structure and design methodology for testing, characterization, and self-repair of TSVs in 3D ICs. The proposed structure can detect the signal degradation through TSVs due to resistive shorts and variations in TSV. For TSVs with moderate signal degradations, the proposed structure reconfigures itself as signal recovery circuit to improve signal fidelity. The paper presents the design of the test/recovery structure, the test methodologies, and demonstrates its effectiveness through stand alone simulations as well as in a full-chip physical design of a 3D IC.
Keywords
integrated circuit design; integrated circuit testing; three-dimensional integrated circuits; 3D integrated circuit; 3D system; TSV defect; full-chip physical design; signal degradation; signal fidelity; signal recovery circuit; stand alone simulations; test/recovery structure; through silicon vias; Degradation; Delay; Flip-flops; Receivers; Resistance; Three dimensional displays; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Computer-Aided Design (ICCAD), 2010 IEEE/ACM International Conference on
Conference_Location
San Jose, CA
ISSN
1092-3152
Print_ISBN
978-1-4244-8193-4
Type
conf
DOI
10.1109/ICCAD.2010.5654255
Filename
5654255
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