A novel power High Electron Mobility Transistor with partial stepped recess in the drain access region for performance improvement

In this letter, we proposed a new power High Electron Mobility Transistor (HEMT) with partial stepped recess in the drain access region. This approach represents a new way to increase the breakdown voltage by 100%, which is very important in higher voltage applications. The use of drain access region recesses allows a 43% decrease of the peak electric field and only a 1.91% increase of the drain access resistance which is negligible. The proposed structure shows an improvement in the maximum oscillation frequency (f_max) and cut-off frequency (f_T) over the conventional structure.