DocumentCode :
3378666
Title :
Fabrication and electrical characteristics of memristors with TiO2/TiO2+x active layers
Author :
Prodromakis, T. ; Michelakis, K. ; Toumazou, C.
Author_Institution :
Inst. of Biomed. Eng., Imperial Coll. London, London, UK
fYear :
2010
fDate :
May 30 2010-June 2 2010
Firstpage :
1520
Lastpage :
1522
Abstract :
We report on the fabrication and electrical characterisation of memristors with TiO2/TiO2+x active layer. This active layer is deposited at room temperature with RF-sputtering and consists of two sub-layers, the top one of which contains excess oxygen atoms. Electrical characterisation of the devices demonstrates similar switching characteristics as previously reported for nano-scale memristors with TiO2/TiO2-x active cores.
Keywords :
memristors; sputter deposition; titanium compounds; RF-sputtering; TiO2-TiO2+x; TiO2/TiO2+x active layers; electrical characteristics; memristor fabrication; nanoscale memristors; oxygen atoms; switching characteristics; temperature 293 K to 298 K; Electric variables; Fabrication; Memristors; Memristor; RF-sputtering; TiO2; memristance; switching elements;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on
Conference_Location :
Paris
Print_ISBN :
978-1-4244-5308-5
Electronic_ISBN :
978-1-4244-5309-2
Type :
conf
DOI :
10.1109/ISCAS.2010.5537379
Filename :
5537379
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3378666
بازگشت