• DocumentCode
    3378666
  • Title

    Fabrication and electrical characteristics of memristors with TiO2/TiO2+x active layers

  • Author

    Prodromakis, T. ; Michelakis, K. ; Toumazou, C.

  • Author_Institution
    Inst. of Biomed. Eng., Imperial Coll. London, London, UK
  • fYear
    2010
  • fDate
    May 30 2010-June 2 2010
  • Firstpage
    1520
  • Lastpage
    1522
  • Abstract
    We report on the fabrication and electrical characterisation of memristors with TiO2/TiO2+x active layer. This active layer is deposited at room temperature with RF-sputtering and consists of two sub-layers, the top one of which contains excess oxygen atoms. Electrical characterisation of the devices demonstrates similar switching characteristics as previously reported for nano-scale memristors with TiO2/TiO2-x active cores.
  • Keywords
    memristors; sputter deposition; titanium compounds; RF-sputtering; TiO2-TiO2+x; TiO2/TiO2+x active layers; electrical characteristics; memristor fabrication; nanoscale memristors; oxygen atoms; switching characteristics; temperature 293 K to 298 K; Electric variables; Fabrication; Memristors; Memristor; RF-sputtering; TiO2; memristance; switching elements;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on
  • Conference_Location
    Paris
  • Print_ISBN
    978-1-4244-5308-5
  • Electronic_ISBN
    978-1-4244-5309-2
  • Type

    conf

  • DOI
    10.1109/ISCAS.2010.5537379
  • Filename
    5537379
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3378666