Title :
Low noise performance of dry etched InGaAs/InAlAs HEMTs in comparison with wet recessed devices
Author :
Duran, H.C. ; Klepser, B -U H ; Patrick, W. ; Schefer, M. ; Cheung, R. ; Bächtold, W.
Author_Institution :
Lab. for Electromagn. Fields & Microwave Electron., Swiss Federal Inst. of Technol., Zurich, Switzerland
Abstract :
Lattice-matched InAlAs/InGaAs HEMTs with selectively dry etched and wet etched gate recesses have been fabricated and both high-frequency and noise measurements have been carried out. The modelling of the noise source parameters shows only minor difference between the two transistor types. There is no evidence of detrimental effects caused by dry etching that reduce the noise performance of the device at high frequencies. To our knowledge, this is the first report of low-noise performance for dry etched InP HEMTs
Keywords :
III-V semiconductors; aluminium compounds; equivalent circuits; etching; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; semiconductor device models; semiconductor device noise; InGaAs-InAlAs-InP; dry etched HEMT; high-frequency measurements; lattice-matched HEMTs; low noise performance; microwave noise performance; modelling; noise measurements; wet recessed devices; Dry etching; Frequency; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Noise measurement; Noise reduction; Wet etching;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492260
