Low noise performance of dry etched InGaAs/InAlAs HEMTs in comparison with wet recessed devices

Author

Duran, H.C. ; Klepser, B -U H ; Patrick, W. ; Schefer, M. ; Cheung, R. ; Bächtold, W.

Author_Institution

Lab. for Electromagn. Fields & Microwave Electron., Swiss Federal Inst. of Technol., Zurich, Switzerland

fYear

1996

fDate

21-25 Apr 1996

Firstpage

372

Lastpage

375

Abstract

Lattice-matched InAlAs/InGaAs HEMTs with selectively dry etched and wet etched gate recesses have been fabricated and both high-frequency and noise measurements have been carried out. The modelling of the noise source parameters shows only minor difference between the two transistor types. There is no evidence of detrimental effects caused by dry etching that reduce the noise performance of the device at high frequencies. To our knowledge, this is the first report of low-noise performance for dry etched InP HEMTs

Keywords

III-V semiconductors; aluminium compounds; equivalent circuits; etching; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; semiconductor device models; semiconductor device noise; InGaAs-InAlAs-InP; dry etched HEMT; high-frequency measurements; lattice-matched HEMTs; low noise performance; microwave noise performance; modelling; noise measurements; wet recessed devices; Dry etching; Frequency; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Noise measurement; Noise reduction; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492260

Filename

492260