• DocumentCode
    3379021
  • Title

    Design dependent process monitoring for back-end manufacturing cost reduction

  • Author

    Chan, Tuck-Boon ; Pant, Aashish ; Cheng, Lerong ; Gupta, Puneet

  • Author_Institution
    Dept. of Electr. Eng., Univ. of California, Los Angeles, CA, USA
  • fYear
    2010
  • fDate
    7-11 Nov. 2010
  • Firstpage
    116
  • Lastpage
    122
  • Abstract
    Short-loop process monitoring structures (usually simple device I - V, C - V measurements made after M1 fabrication) are commonly put in wafer scribe-lines. These test structures are almost always design independent and measured/monitored by the foundry to keep track of process deviations. We propose a design-dependent process monitoring strategy which can accurately predict design performance based on simple Ieff-based delay and Ioff-based leakage power estimates. We show that our strategy works much better (0.99 correlation vs. 0.87) compared to conventional design-independent monitors. Further, we use the predicted delay and leakage power for early yield estimation for pruning bad wafers to save test and back-end manufacturing costs We show that wafer pruning based on our approach can achieve upto 98% of the maximum achievable benefit/profit. We design the measurement and prediction schemes so as to minimize data as well as computation that needs to be kept track of during wafer fabrication. Such design-dependent process monitoring can help target process control/optimization effort, enable quicker yield ramp besides saving test and manufacturing costs.
  • Keywords
    integrated circuit design; integrated circuit yield; optimisation; process control; process monitoring; C-V measurement; I-V measurement; back-end manufacturing; cost reduction; design dependent process monitoring; leakage power estimate; optimization; process control; short-loop process monitoring structures; simple delay; wafer fabrication; wafer pruning; yield estimation; Capacitance; Current measurement; Delay; Noise; Noise measurement; Random variables; Semiconductor device measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer-Aided Design (ICCAD), 2010 IEEE/ACM International Conference on
  • Conference_Location
    San Jose, CA
  • ISSN
    1092-3152
  • Print_ISBN
    978-1-4244-8193-4
  • Type

    conf

  • DOI
    10.1109/ICCAD.2010.5654280
  • Filename
    5654280