• DocumentCode
    3379042
  • Title

    A new smart device array structure for statistical investigations of BTI degradation and recovery

  • Author

    Schlünder, C. ; Berthold, J.M. ; Hoffmann, M. ; Weigmann, J.-M. ; Gustin, W. ; Reisinger, H.

  • Author_Institution
    Corp. Reliability Dept., Infineon Technol. AG, Neubiberg, Germany
  • fYear
    2011
  • fDate
    10-14 April 2011
  • Abstract
    The paper presents the development of new universal smart test-structure solving the typical restrictions of BTI device array investigations. Our integrated structure combined with an adapted measurement methodology ensures very short and most notably uniform recovery times for each device of the entire array. This is the absolutely required precondition for statistical evaluations of the BTI degradation and recovery behavior. Our new smart device array structure approach enables us to investigate the statistic of the parameter degradations itself and the combination of the variability of virgin devices at zero hour together with the additional variations due the non-uniform behavior of BTI degradation.
  • Keywords
    CMOS integrated circuits; MOSFET; integrated circuit testing; statistical analysis; BTI degradation; BTI device array; CMOS technology; smart device array structure; statistical evaluations; universal smart test-structure; Arrays; Decoding; Degradation; Delay; Force; Stress; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium (IRPS), 2011 IEEE International
  • Conference_Location
    Monterey, CA
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4244-9113-1
  • Electronic_ISBN
    1541-7026
  • Type

    conf

  • DOI
    10.1109/IRPS.2011.5784452
  • Filename
    5784452