Title :
Ultra-low transparency current density of strained quantum well lasers by coupling with n-type /spl delta/-doped layer
Author :
Buchinsky, O. ; Blumin, M. ; Sarfaty, R. ; Fekete, D.
Author_Institution :
Dept. of Phys., Technion-Israel Inst. of Technol., Haifa, Israel
Abstract :
By using a combination of a single strained quantum well with a n-type /spl delta/-doped layer, the transparency current density of the laser was lowered. It was achieved without increasing the internal losses, in contrast with a uniformly doped active area.
Keywords :
current density; optical losses; quantum well lasers; semiconductor doping; transparency; AlGaAs-InGaAs; coupling; internal losses; n-type /spl delta/-doped layer; single strained quantum well; strained quantum well lasers; ultra-low transparency current density; Current density; Doping profiles; Energy states; Optical coupling; Potential energy; Quantum well lasers;
Conference_Titel :
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location :
Haifa, Israel
Print_ISBN :
0-7803-3163-X
DOI :
10.1109/ISLC.1996.553740
