Title :
Hot hole induced damage in 1T-FBRAM on bulk FinFET
Author :
Aoulaiche, M. ; Collaert, N. ; Mercha, A. ; Rakowski, M. ; De Wachter, B. ; Groeseneken, G. ; Altimime, L. ; Jurczak, M. ; Lu, Z.
Author_Institution :
Imec, Leuven, Belgium
Abstract :
The reliability of a one Transistor Floating Body Random Access Memory (1T-FBRAM) bulk FinFET cell using Bipolar Junction Transistor (BJT) programming is investigated. It is shown that hot holes generated by impact ionization create interface defects close to the drain and positively charged oxide traps, especially at high transverse electric field. These created defects degrade the cell endurance. Moreover, this degradation is enhanced for shorter channel devices and narrower fin widths, which would be a limitation for the scaling of floating body RAM.
Keywords :
MOSFET; bipolar transistors; electric field effects; hot carriers; random-access storage; reliability; 1T-FBRAM; BJT programming; bipolar junction transistor programming; bulk FinFET cell; floating body RAM; high transverse electric field; hot hole; impact ionization; narrower fin width; one transistor floating body random access memory; shorter channel device; Current measurement; Degradation; Hot carriers; Impact ionization; Logic gates; Programming; Stress; BJT; FinFET; Floating body cell; RAM; cycling; endurance;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2011 IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-9113-1
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2011.5784459
