Hot hole induced damage in 1T-FBRAM on bulk FinFET

Author

Aoulaiche, M. ; Collaert, N. ; Mercha, A. ; Rakowski, M. ; De Wachter, B. ; Groeseneken, G. ; Altimime, L. ; Jurczak, M. ; Lu, Z.

Author_Institution

Imec, Leuven, Belgium

fYear

2011

fDate

10-14 April 2011

Abstract

The reliability of a one Transistor Floating Body Random Access Memory (1T-FBRAM) bulk FinFET cell using Bipolar Junction Transistor (BJT) programming is investigated. It is shown that hot holes generated by impact ionization create interface defects close to the drain and positively charged oxide traps, especially at high transverse electric field. These created defects degrade the cell endurance. Moreover, this degradation is enhanced for shorter channel devices and narrower fin widths, which would be a limitation for the scaling of floating body RAM.

Keywords

MOSFET; bipolar transistors; electric field effects; hot carriers; random-access storage; reliability; 1T-FBRAM; BJT programming; bipolar junction transistor programming; bulk FinFET cell; floating body RAM; high transverse electric field; hot hole; impact ionization; narrower fin width; one transistor floating body random access memory; shorter channel device; Current measurement; Degradation; Hot carriers; Impact ionization; Logic gates; Programming; Stress; BJT; FinFET; Floating body cell; RAM; cycling; endurance;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2011 IEEE International

Conference_Location

Monterey, CA

ISSN

1541-7026

Print_ISBN

978-1-4244-9113-1

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2011.5784459

Filename

5784459