Low-energy UV effects on Organic Thin-Film-Transistors

Author

Wrachien, N. ; Cester, A. ; Bari, D. ; Meneghesso, G. ; Kovac, J. ; Jakabovic, J. ; Sokolsky, M. ; Donoval, D. ; Cirak, J.

Author_Institution

Dept. of Inf. Eng., Univ. of Padova, Padova, Italy

fYear

2011

fDate

10-14 April 2011

Abstract

We subjected Organic Thin-Film-Transistors with different gate dielectrics interface treatment to visible light and low energy UV irradiation. Devices with silicon nanoparticles only feature a remarkable temporary charge trapping, regardless the irradiation wavelength. On the contrary, devices without silicon nanoparticles feature temporary trapped charge under visible light, and permanent mobility degradation if they are irradiated with a wavelength shorter than 420 nm.

Keywords

elemental semiconductors; nanoparticles; organic field effect transistors; thin film transistors; ultraviolet radiation effects; charge trapping; gate dielectrics interface treatment; irradiation wavelength; low energy UV irradiation; low-energy UV effects; mobility degradation; organic thin-film-transistors; silicon nanoparticles; visible light; Degradation; Pentacene; Performance evaluation; Radiation effects; Semiconductor device measurement; Silicon; Thin film transistors; Irradiation; Organic Semiconductors; Reliability; Silicon nanoparticles; Thin-Film-Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2011 IEEE International

Conference_Location

Monterey, CA

ISSN

1541-7026

Print_ISBN

978-1-4244-9113-1

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2011.5784462

Filename

5784462