Title :
A new method for predicting the lifetime of highly stable amorphous-silicon thin-film transistors from accelerated tests
Author :
Liu, T. ; Wagner, S. ; Sturm, J.C.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., Princeton, NJ, USA
Abstract :
We present a new method for predicting the lifetime of highly stable amorphous-silicon thin-film transistors (a-Si TFTs) from accelerated tests at elevated temperatures. The rate of DC saturation current drop can be accelerated by a factor of ~104 when the test temperature is raised to 160°C. This ability is particularly significant for predicting the stability and lifetime of a-Si TFTs as analog drivers in active-matrix organic light emitting diode (AMOLED) displays.
Keywords :
LED displays; driver circuits; elemental semiconductors; organic light emitting diodes; silicon; thin film transistors; AMOLED display; DC saturation current; Si; a-Si TFT; accelerated tests; active-matrix organic light emitting diode; amorphous-silicon thin-film transistor; analog drivers; lifetime prediction; Degradation; Life estimation; Logic gates; Stress; Temperature; Thin film transistors; Threshold voltage; Accelerated lifetime tests; a-Si TFTs; current degradation; stability; stretched hyperbola;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2011 IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-9113-1
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2011.5784463
