A wide-input linear range sub-threshold transconductor for sub-Hz filtering

Author

Sawigun, Chutham ; Pal, Dipankar ; Demosthenous, Andreas

Author_Institution

Dept. of Electron. Eng., Mahanakorn Univ. of Technol., Bangkok, Thailand

fYear

2010

fDate

May 30 2010-June 2 2010

Firstpage

1567

Lastpage

1570

Abstract

A weakly inverted MOS transconductor with wide input linear range and very low transconductance is proposed. The transconductor is achieved by efficient input voltage attenuation formed by connecting identical simple source coupled pairs in a scheme that provides very high extensibility of voltage scaling. Post-layout simulated results in a 0.35-μm standard CMOS process show that G_m in the range of 0.05-1.3 nA/V is achievable along with 380 mV_p-p linear range, at 1% G_m variation under 1.5-V supply. Application in first-order low-pass sub-hertz filtering (with tunable cut-off frequency from 0.3-3 Hz) is demonstrated.

Keywords

CMOS integrated circuits; MOSFET; low-pass filters; MOS transistors; first-order low-pass subhertz filtering; post-layout simulation; size 0.35 mum; standard CMOS process; voltage 1.5 V; voltage 380 mV; voltage attenuation; voltage scaling; weakly inverted MOS transconductor; wide-input linear range subthreshold transconductor; Attenuation; CMOS process; Cutoff frequency; Filtering; Joining processes; Low pass filters; Nonlinear filters; Transconductance; Transconductors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on

Conference_Location

Paris

Print_ISBN

978-1-4244-5308-5

Electronic_ISBN

978-1-4244-5309-2

Type

conf

DOI

10.1109/ISCAS.2010.5537415

Filename

5537415