Statistics of breakdown field and time-dependent dielectric breakdown in contact-to-poly modules

Author

Yokogawa, Shinji ; Uno, Satoshi ; Kato, Ichiro ; Tsuchiya, Hideaki ; Shimizu, Tatsuo ; Sakamoto, Mitsuhiro

Author_Institution

Adv. Device Dev. Dept., Renesas Electron. Corp., Sagamihara, Japan

fYear

2011

fDate

10-14 April 2011

Abstract

In this paper, we present the results of voltage-ramp dielectric breakdown and time-dependent dielectric breakdown experiments for contact-polysilicon control gate intra-level dielectric stacks. Lifetime distribution and area scaling are discussed statistically with the analysis of global and local space deviations using the electrical method. Optimized process reliability is evaluated by performing a SRAM lifetime test that measures the early life failure rate.

Keywords

SRAM chips; electric breakdown; elemental semiconductors; integrated circuit reliability; integrated circuit testing; silicon; statistical analysis; SRAM lifetime test; Si; area scaling; contact-polysilicon control gate intra-level dielectric stacks; electrical method; life failure rate; lifetime distribution; optimized process reliability; space deviations; statistical analysis; time-dependent dielectric breakdown; voltage-ramp dielectric breakdown; Copper; Dielectric breakdown; Electric fields; Lithography; Logic gates; Reliability; Area scaling; CA/PC; ELFR; Global deviation; Local deviation; TDDB; VRDB;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2011 IEEE International

Conference_Location

Monterey, CA

ISSN

1541-7026

Print_ISBN

978-1-4244-9113-1

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2011.5784468

Filename

5784468