Title :
An analytical model of threshold voltage and subthreshold swing for ultra-thin-film SOI MOSFETs
Author :
Chen, Heng Tien ; Huang, Ruey Shing
Author_Institution :
Dept. of Electron., New South Wales Univ., Kensington, NSW, Australia
Abstract :
An analytical model including the semiconducting substrate effect for ultra-thin-film SOI MOSFETs is presented. Analyses show that when the back grate is properly biased, the front gate threshold voltage as well as subthreshold swing are reduced. There are five operation regions according to various combinations of back gate silicon surface and substrate surface conditions identified. Result of back gate bias effect and its dependence on film thickness are discussed
Keywords :
insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; back grate; bias effect; film thickness; front gate; semiconducting substrate effect; subthreshold swing; threshold voltage; ultra-thin-film SOI MOSFETs; Analytical models; Australia; Equations; MOSFET circuits; Parasitic capacitance; Semiconductor films; Silicon; Substrates; Threshold voltage; Transconductance;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1991. Proceedings of Technical Papers, 1991 International Symposium on
Conference_Location :
Taipei
Print_ISBN :
0-7803-0036-X
DOI :
10.1109/VTSA.1991.246662
