Crossbar switch matrix for floating-gate programming over large current ranges

Author

Degnan, Brian P. ; Duffy, Christopher J. ; Hasler, Paul E.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2010

fDate

May 30 2010-June 2 2010

Firstpage

861

Lastpage

864

Abstract

A floating-gate, cross-bar switch matrix with a novel programming method is presented. Single-polysilicon floating-gate transistors are used to hold a “bit” state programmed with short-channel pFET devices that demonstrate hot-electron injection over a large current range. Hot-electron injection modeling in pFETs is contrasted across various channel lengths and bias currents. Circuit design and physical layout are discussed, and characterization data is presented from a matrix fabricated in a 0.5 μm, scalable CMOS process available through MOSIS.

Keywords

CMOS integrated circuits; field effect transistors; hot electron transistors; integrated circuit design; integrated circuit layout; semiconductor device models; semiconductor switches; MOSIS; bias currents; channel lengths; circuit design; crossbar switch matrix; floating-gate programming method; hot-electron injection modelling; physical layout; scalable CMOS process; short-channel pFET devices; single-polysilicon floating-gate transistors; size 0.5 mum; Circuit synthesis; Energy barrier; MOS capacitors; MOSFET circuits; Nonvolatile memory; Secondary generated hot electron injection; Semiconductor device modeling; Switches; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on

Conference_Location

Paris

Print_ISBN

978-1-4244-5308-5

Electronic_ISBN

978-1-4244-5309-2

Type

conf

DOI

10.1109/ISCAS.2010.5537426

Filename

5537426