Correlation of Id- and Ig-random telegraph noise to positive bias temperature instability in scaled high-κ/metal gate n-type MOSFETs

Random telegraph noise (RTN) in high-κ nMOSFETs is directly linked to Positive Bias Temperature Instability (PBTI). For the first time, the correlation between I_d- and I_g-RTN is clearly observed in high-κ MOSFET. I_g-RTN is directly related to physical trapping or de-trapping and the I_d-RTN reflects sensitivity to charge trapping as determined by gm, which is confirmed by both experiments and TCAD simulations.