CuIn(S,Se)2 Electrodeposited control of defects through Cu/In monitoring.

Single step electrodeposition (ED) of CuInSe2 precursors followed by RTP annealing under sulphurising conditions constitutes a promising technology for low cost high efficiency solar cell technologies, obtaining efficiencies up to 11%. Further development of these technologies requires for a deeper understanding on the structure of the absorbers as function of the ED parameters, as well as their impact on the recrystallised layers. Some issues related with the nature of the semiconductor have to be analyzed before obtaining high efficiency devices. In particular, electronic state defects in CuIn(S,Se)2 prepared by electrodeposition have not been widely studied. In this work we report on this electronic state defects and their modification with different the variation of the Cu/In ratio on the absorber layer.