DocumentCode :
3379659
Title :
Highly Ordered Nanostructures for Ultra-Sensitive SERS
Author :
Agarwal, A. ; Fang, C. ; Buddharaju, K.D. ; Balasubramanian, N. ; Kwong, D.L. ; Khalid, N. Md ; Salim, S.M. ; Widjaja, E. ; Garland, M.
Author_Institution :
Inst. of Microelectron., Singapore
fYear :
2007
fDate :
10-14 June 2007
Firstpage :
1923
Lastpage :
1926
Abstract :
CMOS compatible silicon technologies are used to fabricate schematically arranged arrays of nanostructures for Surface Enhanced Raman Spectroscopy (SERS), incorporating processes like DUV photolithography, reactive ion etching and physical vapour deposition of silver and gold. The surface treatment of cuvette and tubes used to handle Rhodamine 6G (R6G) and the substrate pre-treatment procedures, being significant for concentration less than 10-9 M, are elaborated. The Raman signal is also enhanced by the addition of sodium chloride to R6G and by optimizing the sample immersion time in the analytes. 10-10 and 10-12 M R6G with 1 mM sodium chloride is detected on silver and gold terminated SERS substrates respectively.
Keywords :
Raman spectroscopy; nanostructured materials; surface enhanced Raman scattering; CMOS compatible silicon technology; Raman signal; Rhodamine 6G; cuvette; nanostructures; surface enhanced Raman spectroscopy; surface treatment; tubes; CMOS process; CMOS technology; Gold; Lithography; Nanostructures; Raman scattering; Silicon; Silver; Spectroscopy; Surface treatment; Nanostructures; Ordered; R6G; Surface Enhanced Raman Spectroscopy (SERS);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International
Conference_Location :
Lyon
Print_ISBN :
1-4244-0842-3
Electronic_ISBN :
1-4244-0842-3
Type :
conf
DOI :
10.1109/SENSOR.2007.4300535
Filename :
4300535
Link To Document :
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