GaN MMIC PAs for E-Band (71 GHz - 95 GHz) Radio

Author

Micovic, M. ; Kurdoghlian, A. ; Moyer, H.P. ; Hashimoto, P. ; Hu, M. ; Antcliffe, M. ; Willadsen, P.J. ; Wong, W.-S. ; Bowen, R. ; Milosavljevic, I. ; Yoon, Y. ; Schmitz, A. ; Wetzel, M. ; McGuire, C. ; Hughes, B. ; Chow, D.H.

Author_Institution

HRL Labs. LLC, Malibu, CA

fYear

2008

fDate

12-15 Oct. 2008

Firstpage

1

Lastpage

4

Abstract

High data rate E-band (71 GHz- 76 GHz, 81 GHz - 86 GHz, 92 GHz - 95 GHz) communication systems will benefit from power amplifiers that are more than twice as powerful than commercially available GaAs pHEMT MMICs. We report development of three stage GaN MMIC power amplifiers for E-band radio applications that produce 500 mW of saturated output power in CW mode and have > 12 dB of associated power gain. The output power density from 300 mum output gate width GaN MMICs is seven times higher than the power density of commercially available GaAs pHEMT MMICs in this frequency range.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; field effect MIMIC; field effect MMIC; gallium compounds; millimetre wave power amplifiers; radio transmitters; wide band gap semiconductors; E-band communication system; E-band radio; GaN; HFET MMIC technology; MMIC power amplifier; frequency 71 GHz to 95 GHz; millimeter-wave power amplifiers; power 500 mW; power density; Field effect MMICs; Frequency; Gallium arsenide; Gallium nitride; HEMTs; Indium phosphide; PHEMTs; Power amplifiers; Power generation; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuits Symposium, 2008. CSIC '08. IEEE

Conference_Location

Monterey, CA

ISSN

1550-8781

Print_ISBN

978-1-4244-1939-5

Electronic_ISBN

1550-8781

Type

conf

DOI

10.1109/CSICS.2008.7

Filename

4674462