DocumentCode :
3379663
Title :
GaN MMIC PAs for E-Band (71 GHz - 95 GHz) Radio
Author :
Micovic, M. ; Kurdoghlian, A. ; Moyer, H.P. ; Hashimoto, P. ; Hu, M. ; Antcliffe, M. ; Willadsen, P.J. ; Wong, W.-S. ; Bowen, R. ; Milosavljevic, I. ; Yoon, Y. ; Schmitz, A. ; Wetzel, M. ; McGuire, C. ; Hughes, B. ; Chow, D.H.
Author_Institution :
HRL Labs. LLC, Malibu, CA
fYear :
2008
fDate :
12-15 Oct. 2008
Firstpage :
1
Lastpage :
4
Abstract :
High data rate E-band (71 GHz- 76 GHz, 81 GHz - 86 GHz, 92 GHz - 95 GHz) communication systems will benefit from power amplifiers that are more than twice as powerful than commercially available GaAs pHEMT MMICs. We report development of three stage GaN MMIC power amplifiers for E-band radio applications that produce 500 mW of saturated output power in CW mode and have > 12 dB of associated power gain. The output power density from 300 mum output gate width GaN MMICs is seven times higher than the power density of commercially available GaAs pHEMT MMICs in this frequency range.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; field effect MIMIC; field effect MMIC; gallium compounds; millimetre wave power amplifiers; radio transmitters; wide band gap semiconductors; E-band communication system; E-band radio; GaN; HFET MMIC technology; MMIC power amplifier; frequency 71 GHz to 95 GHz; millimeter-wave power amplifiers; power 500 mW; power density; Field effect MMICs; Frequency; Gallium arsenide; Gallium nitride; HEMTs; Indium phosphide; PHEMTs; Power amplifiers; Power generation; Silicon carbide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductor Integrated Circuits Symposium, 2008. CSIC '08. IEEE
Conference_Location :
Monterey, CA
ISSN :
1550-8781
Print_ISBN :
978-1-4244-1939-5
Electronic_ISBN :
1550-8781
Type :
conf
DOI :
10.1109/CSICS.2008.7
Filename :
4674462
Link To Document :
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