• DocumentCode
    3379681
  • Title

    Integrating III-V on Silicon for Future Nanoelectronics

  • Author

    Hudait, Mantu K. ; Chau, Robert

  • Author_Institution
    Technol. & Manuf. Group, Intel Corp., Hillsboro, OR
  • fYear
    2008
  • fDate
    12-15 Oct. 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This paper describes about III-V integration on silicon and summarizes the recent progress on the research efforts to combine the merits of III-V and silicon, on the same silicon wafer, for future high-speed and low-power nanoelectronics. The successful integration of III-V on silicon can open up opportunities for integrating new functionalities and features on silicon, such as integrating logic, optoelectronic and communication platforms on the same Si wafer.
  • Keywords
    III-V semiconductors; high-speed integrated circuits; integrated optoelectronics; low-power electronics; nanoelectronics; III-V integration; Si; high-speed nanoelectronics; integrated optoelectronics; low-power nanoelectronics; silicon wafer; CMOS technology; Energy efficiency; FETs; III-V semiconductor materials; MOSFETs; Manufacturing; Nanoelectronics; Postal services; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Integrated Circuits Symposium, 2008. CSIC '08. IEEE
  • Conference_Location
    Monterey, CA
  • ISSN
    1550-8781
  • Print_ISBN
    978-1-4244-1939-5
  • Electronic_ISBN
    1550-8781
  • Type

    conf

  • DOI
    10.1109/CSICS.2008.8
  • Filename
    4674463