DocumentCode
3379681
Title
Integrating III-V on Silicon for Future Nanoelectronics
Author
Hudait, Mantu K. ; Chau, Robert
Author_Institution
Technol. & Manuf. Group, Intel Corp., Hillsboro, OR
fYear
2008
fDate
12-15 Oct. 2008
Firstpage
1
Lastpage
2
Abstract
This paper describes about III-V integration on silicon and summarizes the recent progress on the research efforts to combine the merits of III-V and silicon, on the same silicon wafer, for future high-speed and low-power nanoelectronics. The successful integration of III-V on silicon can open up opportunities for integrating new functionalities and features on silicon, such as integrating logic, optoelectronic and communication platforms on the same Si wafer.
Keywords
III-V semiconductors; high-speed integrated circuits; integrated optoelectronics; low-power electronics; nanoelectronics; III-V integration; Si; high-speed nanoelectronics; integrated optoelectronics; low-power nanoelectronics; silicon wafer; CMOS technology; Energy efficiency; FETs; III-V semiconductor materials; MOSFETs; Manufacturing; Nanoelectronics; Postal services; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Integrated Circuits Symposium, 2008. CSIC '08. IEEE
Conference_Location
Monterey, CA
ISSN
1550-8781
Print_ISBN
978-1-4244-1939-5
Electronic_ISBN
1550-8781
Type
conf
DOI
10.1109/CSICS.2008.8
Filename
4674463
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