Title :
Effects of the field-edge transistor on SOI MOSFETs
Author :
Chen, Jian ; Ko, Ping Keung ; Hu, Chenming ; Solomon, Ray ; Chan, Tung-Yi
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
Width dependence of SIMOX SOI MOSFETs characteristics are studied. Drain current kinks and subthreshold current humps are found to be dependent on channel width and they are related to the physical shape of the SOI film. It is found that they are the results of thinning of SOI film edge due to LOCOS isolation. The shorter channel width devices are fully depleted while the longer channel width device are not fully depleted. A model is proposed to explain the effects of field-edge transistor in SOI MOSFETs
Keywords :
SIMOX; insulated gate field effect transistors; semiconductor-insulator boundaries; LOCOS isolation; SIMOX; SOI MOSFETs; channel width; drain current kinks; field-edge transistor; subthreshold current humps; CMOS process; CMOS technology; MOSFET circuits; Oxidation; Semiconductor device modeling; Semiconductor films; Shape; Silicon on insulator technology; Subthreshold current; Voltage;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1991. Proceedings of Technical Papers, 1991 International Symposium on
Conference_Location :
Taipei
Print_ISBN :
0-7803-0036-X
DOI :
10.1109/VTSA.1991.246678
