DocumentCode
3379718
Title
Effects of the field-edge transistor on SOI MOSFETs
Author
Chen, Jian ; Ko, Ping Keung ; Hu, Chenming ; Solomon, Ray ; Chan, Tung-Yi
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fYear
1991
fDate
22-24 May 1991
Firstpage
219
Lastpage
223
Abstract
Width dependence of SIMOX SOI MOSFETs characteristics are studied. Drain current kinks and subthreshold current humps are found to be dependent on channel width and they are related to the physical shape of the SOI film. It is found that they are the results of thinning of SOI film edge due to LOCOS isolation. The shorter channel width devices are fully depleted while the longer channel width device are not fully depleted. A model is proposed to explain the effects of field-edge transistor in SOI MOSFETs
Keywords
SIMOX; insulated gate field effect transistors; semiconductor-insulator boundaries; LOCOS isolation; SIMOX; SOI MOSFETs; channel width; drain current kinks; field-edge transistor; subthreshold current humps; CMOS process; CMOS technology; MOSFET circuits; Oxidation; Semiconductor device modeling; Semiconductor films; Shape; Silicon on insulator technology; Subthreshold current; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications, 1991. Proceedings of Technical Papers, 1991 International Symposium on
Conference_Location
Taipei
ISSN
1524-766X
Print_ISBN
0-7803-0036-X
Type
conf
DOI
10.1109/VTSA.1991.246678
Filename
246678
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