Preparation of piezoelectric ZnO films by target facing type of sputtering method

Author

Hashimoto, Ken-Ya ; Ogawa, Shotaro ; Nonoguchi, Akinori ; Omori, Tatsuya ; Yamaguchi, Masatsune

Author_Institution

Dept. of Electron. & Mech. Eng., Chiba Univ., Japan

Volume

1

fYear

1998

fDate

1998

Firstpage

207

Abstract

This paper describes the preparation of piezoelectric ZnO films by target facing type of sputtering (TFTS) method. The method enables to generate high density plasma under a low gas pressure of the order of 10 ^-3-10^-4 Torr. The film is grown by reactive sputtering of metal Zn target in the ambient gas of pure O₂. Although the high density plasma is basically generated by DC power source, a spark killer is successfully employed to stabilise glow discharge and enables to deposit ZnO films under a low gas pressure. The effects of the sputtering conditions on the ZnO films are discussed in detail, and it is shown how the DC-TFTS method is effective in the preparation of high-quality ZnO films by applying them to surface acoustic wave devices operating in VHF and UHF ranges

Keywords

II-VI semiconductors; piezoelectric semiconductors; piezoelectric thin films; plasma deposition; sputter deposition; surface acoustic wave devices; zinc compounds; DC power source; DC-TFTS method; O₂; UHF range; VHF range; ZnO; ambient gas; glow discharge; high density plasma; low gas pressure; metal Zn target; piezoelectric ZnO films; preparation; pure O₂; reactive sputtering; spark killer; sputtering conditions; sputtering method; surface acoustic wave devices; target facing type; DC generators; Glow discharges; Piezoelectric films; Plasma density; Plasma sources; Power generation; Sparks; Sputtering; Surface acoustic wave devices; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 1998. Proceedings., 1998 IEEE

Conference_Location

Sendai

ISSN

1051-0117

Print_ISBN

0-7803-4095-7

Type

conf

DOI

10.1109/ULTSYM.1998.762130

Filename

762130