Title :
A Metamorphic 220-320 GHz HEMT Amplifier MMIC
Author :
Tessmann, A. ; Leuther, A. ; Massler, H. ; Kuri, M. ; Loesch, R.
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys. (IAF), Freiburg
Abstract :
In this paper, we present the development of a compact H-band (220-325 GHz) submillimeter-wave monolithic integrated circuit (S-MMIC) amplifier for use in next generation active and passive high-resolution imaging systems. The low- noise amplifier (LNA) circuit has been realized using an advanced 35 nm InAlAs/InGaAs based metamorphic high electron mobility transistor (mHEMT) technology and achieves a small-signal gain of 13.5 dB at 300 GHz and a linear gain of more than 10.5 dB over the bandwidth from 220 to 320 GHz. The use of grounded coplanar waveguide (GCPW) topology in combination with cascode transistors resulted in a very compact die size of only 0.43 times 0.82 mm2.
Keywords :
MMIC amplifiers; coplanar waveguides; high electron mobility transistors; submillimetre wave amplifiers; bandwidth 220 GHz to 325 GHz; gain 13.5 dB; grounded coplanar waveguide; high electron mobility transistor; low-noise amplifier; metamorphic HEMT amplifier MMIC; submillimeter-wave monolithic integrated circuit amplifier; Gain; HEMTs; High-resolution imaging; Indium compounds; Integrated circuit noise; Low-noise amplifiers; MMICs; Monolithic integrated circuits; Submillimeter wave integrated circuits; Submillimeter wave technology;
Conference_Titel :
Compound Semiconductor Integrated Circuits Symposium, 2008. CSIC '08. IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-1939-5
Electronic_ISBN :
1550-8781
DOI :
10.1109/CSICS.2008.12
