ELO bonding of GaAs devices on diamond film SAW devices

Author

Koh, K. ; Takabatake, N. ; Noge, S. ; Kobayashi, T. ; Arai, T. ; Hohkawa, K.

Author_Institution

Kanagawa Inst. of Technol., Japan

Volume

1

fYear

1998

fDate

1998

Firstpage

327

Abstract

This paper reports a basic study on the integration of diamond film with GaAs devices. We investigated the roughness of the diamond film surface by AFM and estimated the thermal conductivity of the diamond film by acoustic-optical measurement technology. We also bonded GaAs devices such as Schottky junctions and MSM diodes on the diamond film using improved epitaxial liftoff technology, in which a polyimide film is used in place of black wax. These results confirm the possibility of fabricating SAW-semiconductor functional devices on the diamond film

Keywords

III-V semiconductors; Schottky barriers; atomic force microscopy; diamond; gallium arsenide; joining processes; metal-semiconductor-metal structures; surface acoustic wave devices; thermal conductivity; AFM; C-GaAs; MSM diodes; Schottky junctions; acoustic-optical measurement; diamond film SAW devices; epitaxial liftoff; polyimide film; surface roughness; thermal conductivity; Acoustic measurements; Bonding; Conductive films; Conductivity measurement; Gallium arsenide; Rough surfaces; Schottky diodes; Surface acoustic wave devices; Surface roughness; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 1998. Proceedings., 1998 IEEE

Conference_Location

Sendai

ISSN

1051-0117

Print_ISBN

0-7803-4095-7

Type

conf

DOI

10.1109/ULTSYM.1998.762157

Filename

762157