DocumentCode :
3379931
Title :
An overview of charge pumping circuits for flash memory applications
Author :
Wong, Oi-Ying ; Hei Wong ; Wing-Shan Tam ; Kok, Chi-Wah
Author_Institution :
Dept. of Electron. Eng., City Univ. of Hong Kong, Kowloon, China
fYear :
2011
fDate :
25-28 Oct. 2011
Firstpage :
116
Lastpage :
119
Abstract :
Charge pump is an indispensable component in flash memory systems in order to generate high operation voltages for programming flash memory cells. In this paper, we review some high-efficiency charge pump circuits that fulfill the stringent requirements in modern flash memory technology. The performance of these charge pump circuits will be compared in terms of voltage conversion efficiency, power efficiency, area, and process requirement. Some advanced charge pump circuits proposed recently will also be introduced.
Keywords :
charge pump circuits; flash memories; charge pumping circuit; flash memory cell programming; power efficiency; process requirement; voltage conversion efficiency; Boosting; Europe; Fabrication; Ink; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ASIC (ASICON), 2011 IEEE 9th International Conference on
Conference_Location :
Xiamen
ISSN :
2162-7541
Print_ISBN :
978-1-61284-192-2
Electronic_ISBN :
2162-7541
Type :
conf
DOI :
10.1109/ASICON.2011.6157136
Filename :
6157136
Link To Document :
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