DocumentCode
3379951
Title
Diode fabricated by layer by layer deposition of semiconductor nanoparticles
Author
Hemtanon, B. ; Thanachayanont, C. ; Das, D. ; Dutta, J.
Author_Institution
Sch. of Adv. Technol., Asian Inst. of Technol., Pathumthani
fYear
2005
fDate
21-24 Nov. 2005
Firstpage
1
Lastpage
6
Abstract
We report the development of a modified polyelectrolyte deposition technique for building multilayer thin films. The quantum dots of zinc sulphide nanoparticles doped with manganese were synthesized by co-precipitation techniques and the nanoparticles were found to consist of crystallites that were estimated to be around 2.2 nm. The modified polyelectrolyte deposition technique has been used for the growth of multifunctional nanoparticulate ZnS thin films and Schottky diodes. The Schottky junction device exhibit diode-like behavior and this technique shows promise for large area construction of diodes using wet-chemical synthesis of semiconductor nanoparticles.
Keywords
II-VI semiconductors; Schottky diodes; crystallites; nanoparticles; polymer electrolytes; precipitation; semiconductor doping; semiconductor junctions; semiconductor quantum dots; semiconductor thin films; zinc compounds; Schottky diodes; Schottky junction device; ZnS; co-precipitation; crystallites; doping; layer-by-layer deposition; multifunctional nanoparticulate thin films; polyelectrolyte deposition; quantum dots; semiconductor nanoparticles; wet-chemical synthesis; zinc sulphide nanoparticles; Crystallization; Manganese; Nanoparticles; Nonhomogeneous media; Quantum dots; Schottky diodes; Semiconductor diodes; Semiconductor thin films; Sputtering; Zinc; I-V; Nanoparticles; diode; polyelectrolyte deposition; self-organisation;
fLanguage
English
Publisher
ieee
Conference_Titel
TENCON 2005 2005 IEEE Region 10
Conference_Location
Melbourne, Qld.
Print_ISBN
0-7803-9311-2
Electronic_ISBN
0-7803-9312-0
Type
conf
DOI
10.1109/TENCON.2005.301271
Filename
4085082
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