A Novel High Voltage, Vertical MOSFET for High Power RF Applications

Author

Golio, Mike ; Davies, Robert ; Gogoi, Bishnu ; Lutz, Dave ; Battaglia, Brian ; Neeley, Robert ; Wright, Walt ; Rice, Dave ; Le, Phuong ; Purchine, Mike ; Elliot, Alex ; Ran, Son T.

Author_Institution

HWi Semicond., Inc., Phoenix, AZ

fYear

2008

fDate

12-15 Oct. 2008

Firstpage

1

Lastpage

4

Abstract

This paper describes a novel, high-voltage vertical FET (HWFET) for high power RF applications. The silicon MOSFET provides improved power density, RF gain, and ruggedness over competing device technologies. A unique flip-chip packaging strategy also provides thermal and reliability advantages. Both a 25 Watt and a 100 Watt embodiment of the structure exhibit over 20 dB of gain with >45% efficiency from 1.2 to 1.4 GHz in a package that is approximately 1/4 the size of competing device technologies. A 300 Watt version of the device exhibits >15.5 dB of gain with > 46% efficiency from 1.03 to 1.09 GHz.

Keywords

MOSFET; UHF integrated circuits; flip-chip devices; reliability; silicon; thermal management (packaging); RF gain; flip-chip packaging; frequency 1.2 GHz to 1.4 GHz; high power RF applications; high voltage vertical MOSFET; power 100 W; power 25 W; power 300 W; power density; reliability; silicon MOSFET; Dielectrics; Gain; MOSFET circuits; Packaging; Parasitic capacitance; Power MOSFET; Radio frequency; Silicon; Space technology; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuits Symposium, 2008. CSIC '08. IEEE

Conference_Location

Monterey, CA

ISSN

1550-8781

Print_ISBN

978-1-4244-1939-5

Electronic_ISBN

1550-8781

Type

conf

DOI

10.1109/CSICS.2008.21

Filename

4674476