Title :
Using GaN FETs for High Power RF Switches
Author_Institution :
Adv. Product Center in Dallas, Space & Airborne Syst. Div., Raytheon Co., Dallas, TX
Abstract :
GaN FET technology is facilitating the development of a new level of high power solid state switching performance. FET switches are now obtaining RF power handling levels comparable and even exceeding conventional PIN and mechanical switches up thru microwave frequencies while still offering the traditional advantages common to GaAs switches.
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; gallium compounds; semiconductor switches; wide band gap semiconductors; FET switches; FET technology; GaAs; GaN; RF power handling levels; high power RF switches; high power solid state switching; Breakdown voltage; Circuit topology; Communication switching; FETs; Gallium arsenide; Gallium nitride; Radio frequency; Switches; Switching circuits; Voltage control;
Conference_Titel :
Compound Semiconductor Integrated Circuits Symposium, 2008. CSIC '08. IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-1939-5
Electronic_ISBN :
1550-8781
DOI :
10.1109/CSICS.2008.22
