X-Band Robust AlGaN/GaN Receiver MMICs with over 41 dBm Power Handling

Author

Janssen, J. P B ; van Heijningen, M. ; Provenzano, G. ; Visser, G.C. ; Morvan, E. ; van Vliet, F.E.

Author_Institution

TNO Defence, Security & Safety, The Hague

fYear

2008

fDate

12-15 Oct. 2008

Firstpage

1

Lastpage

4

Abstract

Gallium-Nitride technology is known for its high power density and power amplifier designs, but is also very well suited to realize robust receiver components. This paper presents the design and measurement of a robust AlGaN/GaN Low Noise Amplifier and Transmit/Receive Switch MMIC. Two versions of both MMICs have been designed in the Alcatel-Thales III-V lab AlGaN/GaN microstrip technology. One chipset version operates at X-band and the second also shows wideband performance. Input power handling of >46 dBm for the switch and >41 dBm for the LNA have been measured.

Keywords

III-V semiconductors; MMIC; aluminium compounds; gallium compounds; low noise amplifiers; microwave receivers; microwave switches; Alcatel-Thales III-V lab microstrip technology; MMIC; X-band robust receiver; gallium-nitride technology; low noise amplifier; power amplifier; power handling; Aluminum gallium nitride; Broadband amplifiers; Gallium nitride; High power amplifiers; Low-noise amplifiers; MMICs; Noise measurement; Noise robustness; Semiconductor device measurement; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuits Symposium, 2008. CSIC '08. IEEE

Conference_Location

Monterey, CA

ISSN

1550-8781

Print_ISBN

978-1-4244-1939-5

Electronic_ISBN

1550-8781

Type

conf

DOI

10.1109/CSICS.2008.23

Filename

4674478