Title :
Some aspects of nitrogen doped amorphous carbon thin films
Author :
Arya, Hare Ram ; Adhikari, Sudip ; Kalita, Golap ; Ghimire, Dilip Chandra ; Uchida, Hideo ; Sugai, Hideo ; Umen, Masayoshi
Author_Institution :
Department of Electrical and Electronic Engineering, Chubu University, 1200 Matsumoto-cho, Kasugai 487-8501 Japan
Abstract :
Optical, structural and photovoltaic properties of amorphous carbon (a-C) thin films deposited on p-type silicon (p-Si) and quartz substrates by microwave (MW) surface-wave plasma (SWP) chemical vapor deposition (CVD) were analyzed in this paper. Argon (Ar: 200 sccm) was used as carrier gas while acetylene (C2H2: 20 sccm) and nitrogen (N: 0 and 10 sccm) were used as plasma source. Analytical methods such as X-ray photoelectron spectroscopy (XPS), Raman and UV-visible spectroscopy were employed to investigate the structural and optical properties of the a-C thin films respectively. The optical gaps of the films were tailored from 1.2 eV to 0.9 eV with nitrogen doping. Nitrogen doped a-C (a-C:N) thin film showed the photoconductivity action under white light illumination and hence Au/a-C:N/p-Si/Au heterojunction solar cell was fabricated with 0.23 V open circuit voltage, fill factor 25 and efficiency 5.7* 10−3 %.
Keywords :
Amorphous materials; Argon; Gold; Nitrogen; Optical films; Plasma properties; Plasma sources; Raman scattering; Spectroscopy; Transistors; XPS; amorphous carbon; photovoltaic properties; surface-wave plasma;
Conference_Titel :
Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
978-1-4244-1640-0
Electronic_ISBN :
0160-8371
DOI :
10.1109/PVSC.2008.4922649