Selective area growth with MOVPE

Devices for optoelectronic and photonic applications are of growing interest for future optical networks. These devices commonly require the integration of at least one active section like laser, amplifier, modulator etc. with passive sections like low loss interconnection waveguides, etc.. The author reports on the successful selective area growth of tensile strained structures and realized excellent polarisation insensitive 2×2 space switch matrices with TE/TM ratios <1 dB, with the best value of 0.2 dB for a wavelength of 1550 nm. Multibandgap control was successfully demonstrated with monolithically integrated mode locked lasers generating short optical pulses of 12 ps width. A consequent development of all parameters of this integration scheme opens a broad spectrum of application in future complex devices