Author :
Moyer, H.P. ; Kurdoghlian, A. ; Micovic, M. ; Lee, T. ; Hiramoto, R.O. ; Zaire, M. J Be ; Nguyen, S. ; Hashimoto, P. ; Schmitz, A. ; Milosavljevic, I. ; Willadsen, P.J. ; Wong, W.-S. ; Antcliffe, M. ; Wetzel, M.D. ; Hu, M.
Abstract :
We report a robust Q-band GaN MMIC LNA operating in the 42-47GHz frequency range using a 0.15 mum T-gate process. The measured noise figure of the MMIC is less than 3.1 dB over the band of interest and the NF has a minimum of 2.9 dB at a frequency of 45.5 GHz. The MMIC gain is between 19 and 20 dB across the band and the input return loss of the MMIC is less than -10 dB. The measured OIP3 of the MMIC is 28 dBm at 45 GHz. The 3 stage MMIC is 2.5times1.3 mm2 and consumes less than 400 mW. To the authors knowledge this is the best combination of RF GaN performance at Q-band and the first reported GaN MMIC LNA in this frequency band.
Keywords :
III-V semiconductors; MMIC power amplifiers; gallium compounds; low noise amplifiers; millimetre wave power amplifiers; wide band gap semiconductors; GaN; MMIC gain; Q-band MMIC LNA; T-gate process; frequency 42 GHz to 47 GHz; low noise amplifier; radiofrequency GaN performance; size 0.15 mum; FETs; Gallium arsenide; Gallium nitride; Linearity; MMICs; Noise figure; Noise measurement; Radio frequency; Silicon carbide; Substrates;
