Title :
Response of a single trap to AC negative Bias Temperature stress
Author :
Toledano-Luque, M. ; Kaczer, B. ; Roussel, Ph J. ; Grasser, T. ; Wirth, G.I. ; Franco, J. ; Vrancken, C. ; Horiguchi, N. ; Groeseneken, G.
Author_Institution :
Univ. Complutense de Madrid, Madrid, Spain
Abstract :
We study the properties of a single gate oxide trap subjected to AC Bias Temperature Instability (BTI) stress conditions by means of Time Dependent Defect Spectroscopy. A theory for predicting the occupancy of a single trap after AC stress is developed based on first order kinetics and verified on experimental data. The developed theory can be used to develop circuit simulators and predict time dependent variability.
Keywords :
CMOS integrated circuits; MOSFET; AC bias temperature instability; AC negative bias temperature stress; single gate oxide trap; time dependent defect spectroscopy; Histograms; Kinetic theory; Logic gates; Low voltage; Stress; Temperature; Transient analysis; AC stress; MOSFET; Negative Bias Temperature Instability; SiON; constant voltage stress; reliability; variability;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2011 IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-9113-1
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2011.5784501
