DocumentCode
3380129
Title
Response of a single trap to AC negative Bias Temperature stress
Author
Toledano-Luque, M. ; Kaczer, B. ; Roussel, Ph J. ; Grasser, T. ; Wirth, G.I. ; Franco, J. ; Vrancken, C. ; Horiguchi, N. ; Groeseneken, G.
Author_Institution
Univ. Complutense de Madrid, Madrid, Spain
fYear
2011
fDate
10-14 April 2011
Abstract
We study the properties of a single gate oxide trap subjected to AC Bias Temperature Instability (BTI) stress conditions by means of Time Dependent Defect Spectroscopy. A theory for predicting the occupancy of a single trap after AC stress is developed based on first order kinetics and verified on experimental data. The developed theory can be used to develop circuit simulators and predict time dependent variability.
Keywords
CMOS integrated circuits; MOSFET; AC bias temperature instability; AC negative bias temperature stress; single gate oxide trap; time dependent defect spectroscopy; Histograms; Kinetic theory; Logic gates; Low voltage; Stress; Temperature; Transient analysis; AC stress; MOSFET; Negative Bias Temperature Instability; SiON; constant voltage stress; reliability; variability;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2011 IEEE International
Conference_Location
Monterey, CA
ISSN
1541-7026
Print_ISBN
978-1-4244-9113-1
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2011.5784501
Filename
5784501
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