DocumentCode
3380135
Title
Photo-excited dry cleaning for ULSI devices
Author
Sato, Yasuhisa ; Sugino, Rinshi ; Okuno, Masaki ; Kikuchi, Nobuo ; Teramae, Jun-ichi ; Ogawa, Akinao ; Hijiya, Shimpei ; Ito, Takashi
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
fYear
1991
fDate
22-24 May 1991
Firstpage
122
Lastpage
125
Abstract
The authors studied the reverse current in n+p junctions after photo-excited cleaning for samples fabricated by RIE. Silicon surfaces of a wafer contaminated during RIE were etched by photo-excited dry cleaning using chlorine, after which the unexpectedly large junction leakage current often occurring after wet cleaning alone was completely suppressed
Keywords
VLSI; elemental semiconductors; integrated circuit technology; semiconductor technology; silicon; sputter etching; surface treatment; RIE; Si; ULSI devices; elemental semiconductor; leakage current; n+p junctions; photo-excited dry cleaning; reverse current; Aluminum; Dry etching; Electric breakdown; Leakage current; Pollution measurement; Silicon; Surface cleaning; Surface contamination; Ultra large scale integration; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications, 1991. Proceedings of Technical Papers, 1991 International Symposium on
Conference_Location
Taipei
ISSN
1524-766X
Print_ISBN
0-7803-0036-X
Type
conf
DOI
10.1109/VTSA.1991.246697
Filename
246697
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