DocumentCode
3380146
Title
Ku-Band Six-Bit RF MEMS Time Delay Network
Author
Nordquist, Christopher D. ; Dyck, Christopher W. ; Kraus, Garth M. ; Sullivan, Charles T. ; Austin, Franklin, IV ; Finnegan, Patrick S. ; Ballance, M.H.
Author_Institution
Microsyst. Sci., Technol., & Components, Sandia Nat. Labs., Albuquerque, NM
fYear
2008
fDate
12-15 Oct. 2008
Firstpage
1
Lastpage
4
Abstract
A six-bit time delay circuit operating from DC to 18 GHz is reported. Capacitively loaded transmission lines are used to reduce the physical length of the delay elements and shrink the die size. Additionally, selection of the reference line lengths to avoid resonances allows the replacement of series-shunt switching elements with only series elements. With through-wafer transitions and a packaging seal ring, the 7 mm x 10 mm circuit demonstrates <2.8 dB of loss and 60 ps of delay with good delay flatness and accuracy through 18 GHz.
Keywords
delay circuits; high-frequency transmission lines; microswitches; microwave phase shifters; Kw-band six-bit RF MEMS; capacitively loaded transmission lines; packaging seal ring; reference line lengths; series-shunt switching elements; six-bit time delay circuit; through-wafer transitions; time delay network; Broadband antennas; Delay effects; Distributed parameter circuits; Microstrip; Phase shifters; Phased arrays; Radiofrequency microelectromechanical systems; Resonance; Switches; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Integrated Circuits Symposium, 2008. CSIC '08. IEEE
Conference_Location
Monterey, CA
ISSN
1550-8781
Print_ISBN
978-1-4244-1939-5
Electronic_ISBN
1550-8781
Type
conf
DOI
10.1109/CSICS.2008.29
Filename
4674484
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