A deep-submicrometer raised source/drain LDD structure fabricated using hot-wall epitaxy

An elevated LDD (ELDD) structure has been designed, fabricated, and evaluated. A hot-wall reactor was used to selectively grow epitaxial silicon in the regions adjacent to the gate. The ELDD devices were equivalent to TOPS and LDD devices in current drive capability. The hot-electron reliability of the ELDD devices was superior to that of LDD devices. A general comparison among alternative LDD structures is given in terms of critical performance and reliability criteria. The ELDD structure is shown to be a promising candidate for deep-submicrometer applications