A deep-submicrometer raised source/drain LDD structure fabricated using hot-wall epitaxy

Author

Moon, J.E. ; Galewski, C. ; Garfinkel, T. ; Wong, M. ; Oldham, W.G. ; Ko, P.K. ; Hu, C.

Author_Institution

Eastman Kodak Co., Rochester, NY, USA

fYear

1991

fDate

22-24 May 1991

Firstpage

117

Lastpage

121

Abstract

An elevated LDD (ELDD) structure has been designed, fabricated, and evaluated. A hot-wall reactor was used to selectively grow epitaxial silicon in the regions adjacent to the gate. The ELDD devices were equivalent to TOPS and LDD devices in current drive capability. The hot-electron reliability of the ELDD devices was superior to that of LDD devices. A general comparison among alternative LDD structures is given in terms of critical performance and reliability criteria. The ELDD structure is shown to be a promising candidate for deep-submicrometer applications

Keywords

VLSI; circuit reliability; hot carriers; integrated circuit technology; semiconductor growth; vapour phase epitaxial growth; Si epitaxy; VLSI; current drive capability; deep-submicrometer raised source/drain; elevated LDD structure; hot-electron reliability; hot-wall epitaxy; performance criteria; reliability criteria; selective growth; Circuits; Electrons; Epitaxial growth; Hot carrier effects; Hydrogen; Implants; Inductors; Moon; Silicon; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 1991. Proceedings of Technical Papers, 1991 International Symposium on

Conference_Location

Taipei

ISSN

1524-766X

Print_ISBN

0-7803-0036-X

Type

conf

DOI

10.1109/VTSA.1991.246698

Filename

246698