• DocumentCode
    3380167
  • Title

    Double spacer technique for titanium self-aligned silicidation technology

  • Author

    Su, W.D. ; Chang, S.W.

  • Author_Institution
    Dept. of Adv. Technol. Dev., ERSO, ITRI, Hsinchu, Taiwan
  • fYear
    1991
  • fDate
    22-24 May 1991
  • Firstpage
    113
  • Lastpage
    116
  • Abstract
    Besides the conventional sidewall oxide spacer used in Titanium Self-Aligned Silicide process, an additional sidewall, second spacer was applied to extend the distance of silicided gate and the source/drain region. Junction integrity and bridging problem between the gate and source/drain can be improved by this additional spacer
  • Keywords
    CMOS integrated circuits; VLSI; integrated circuit technology; metallisation; titanium compounds; CMOS; TiSi2; VLSI; additional spacer; bridging problem; double spacer technique; junction integrity; salicide process; self-aligned silicidation technology; Cobalt; Electrons; Etching; Silicidation; Silicides; Space technology; Stability; Testing; Tin; Titanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications, 1991. Proceedings of Technical Papers, 1991 International Symposium on
  • Conference_Location
    Taipei
  • ISSN
    1524-766X
  • Print_ISBN
    0-7803-0036-X
  • Type

    conf

  • DOI
    10.1109/VTSA.1991.246699
  • Filename
    246699
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3380167