Title :
Double spacer technique for titanium self-aligned silicidation technology
Author :
Su, W.D. ; Chang, S.W.
Author_Institution :
Dept. of Adv. Technol. Dev., ERSO, ITRI, Hsinchu, Taiwan
Abstract :
Besides the conventional sidewall oxide spacer used in Titanium Self-Aligned Silicide process, an additional sidewall, second spacer was applied to extend the distance of silicided gate and the source/drain region. Junction integrity and bridging problem between the gate and source/drain can be improved by this additional spacer
Keywords :
CMOS integrated circuits; VLSI; integrated circuit technology; metallisation; titanium compounds; CMOS; TiSi2; VLSI; additional spacer; bridging problem; double spacer technique; junction integrity; salicide process; self-aligned silicidation technology; Cobalt; Electrons; Etching; Silicidation; Silicides; Space technology; Stability; Testing; Tin; Titanium;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1991. Proceedings of Technical Papers, 1991 International Symposium on
Conference_Location :
Taipei
Print_ISBN :
0-7803-0036-X
DOI :
10.1109/VTSA.1991.246699
