• DocumentCode
    3380171
  • Title

    Understanding of traps causing random telegraph noise based on experimentally extracted time constants and amplitude

  • Author

    Abe, Kenichi ; Teramoto, Akinobu ; Sugawa, Shigetoshi ; Ohmi, Tadahiro

  • Author_Institution
    Grad. Sch. of Eng., Tohoku Univ., Sendai, Japan
  • fYear
    2011
  • fDate
    10-14 April 2011
  • Abstract
    We develop a high-speed method to extract time constants and noise amplitude of random telegraph noise (RTN). We investigate distributions of these RTN parameters for more than 270 n- and p-MOSFETs and clarify spectroscopy of traps causing RTN. Most of traps are distributed in an energy range of 220 meV, and mean times to capture/emission are measured in a wide range between 10 μs and 20 ms.
  • Keywords
    MOSFET; electron traps; hole traps; semiconductor device noise; MOSFET; noise amplitude; random telegraph noise; time constants; traps; Electron traps; FETs; Histograms; Logic gates; MOSFET circuits; Noise; energy distribution; random telegraph noise; time constant; trap;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium (IRPS), 2011 IEEE International
  • Conference_Location
    Monterey, CA
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4244-9113-1
  • Electronic_ISBN
    1541-7026
  • Type

    conf

  • DOI
    10.1109/IRPS.2011.5784503
  • Filename
    5784503
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3380171