Title :
A V-Band Fully-Integrated CMOS Distributed Active Transformer Power Amplifier for 802.15.TG3c Wireless Personal Area Network Applications
Author :
Jen, Yung-Nien ; Tsai, Jeng-Han ; Huang, Tian-Wei ; Wang, Huei
Author_Institution :
Dept. of Electr. Eng. & Grad. Inst. of Commun. Eng., Nat. Taiwan Univ., Taipei
Abstract :
A 60-GHz fully-integrated and broadband distributed active transformer (DAT) power amplifier (PA) is implemented in 90-nm CMOS technology. The PA performs a flat small signal gain of 26 plusmn 1 dB from 57 to 69 GHz which covers full band for 60-GHz wireless personal network (WPAN) applications. By using the DAT output combine structure, this PA delivers 18-dBm measured output power with 12.2% PAE at 60 GHz with a compact chip size. To the best of our knowledge, this DAT CMOS PA demonstrates the highest output power among the reported 60-GHz CMOS PAs to date.
Keywords :
CMOS integrated circuits; impedance convertors; personal area networks; power amplifiers; wireless LAN; CMOS technology; V-band fully-integrated CMOS distributed active transformer power amplifier; bandwidth 60 GHz; size 90 nm; wireless personal area network applications; Broadband amplifiers; CMOS technology; Distributed amplifiers; Performance gain; Power amplifiers; Power generation; Power measurement; Semiconductor device measurement; Size measurement; Wireless personal area networks;
Conference_Titel :
Compound Semiconductor Integrated Circuits Symposium, 2008. CSIC '08. IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-1939-5
Electronic_ISBN :
1550-8781
DOI :
10.1109/CSICS.2008.31