Title :
Latch-up free ESD protection design with SCR structure in advanced CMOS technology
Author :
Wang, Chang-Tzu ; Tang, Tien-Hao ; Su, Kuan-Cheng
Author_Institution :
ESD Eng. Dept., United Microelectron. Corp., Hsinchu, Taiwan
Abstract :
An electrostatic discharge (ESD) protection circuit with silicon-controlled-rectifier (SCR) device has been designed without latch-up risk. After fabrication in a 0.13-μm CMOS process, the ESD protection circuit with SCR width of 60μm can sustain 6.2kV human-body-model (HBM) and 475V machine model (MM) ESD tests. The latch-up test shows the immunity against 500-mA triggering current under 3.3V supply voltage.
Keywords :
CMOS integrated circuits; electrostatic discharge; protection; thyristors; CMOS technology; HBM; MM ESD test; SCR device; SCR structure; current 500 mA; electrostatic discharge protection circuit; human-body-model; latch-up free ESD protection design; machine model ESD tests; silicon-controlled-rectifler device; size 0.13 mum; size 60 mum; voltage 3.3 V; voltage 475 V; voltage 6.2 kV; Anodes; CMOS integrated circuits; CMOS process; Electrostatic discharge; Logic gates; Thyristors; Voltage measurement; electrostatic discharge (ESD); latch-up; silicon-controlrectifier (SCR);
Conference_Titel :
Reliability Physics Symposium (IRPS), 2011 IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-9113-1
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2011.5784507
