Title :
Wideband PA and LAN for 60-GHz Radio in 90-nm LP CMOS Technology
Author :
Lin, Jau-Jr ; To, Kun-Hin ; Brown, Bill ; Hammock, Donna ; Majerus, Michael ; Tutt, Marcel ; Huang, W. Margaret
Author_Institution :
Technol. Solutions Organ., Freescale Semicond. Inc., Tempe, AZ
Abstract :
paper reports a LNA and a PA for IEEE802.15 WAPN application in a 90-nm LP (low power) 1P6M CMOS technology. The LNA has a 13-dB peak gain and a 7-dB NF and the PA has a 9.8-dB gain and a +11.2-dBm saturated output power. Both LNA and PA have achieved input and output matching bandwidths exceeding 10 GHz, while the reflection coefficient (|S11|, |S22|) < -10 dB. The design was targeted that |S22| variation within 2 dB from the peak over the frequencies and the measured 2-dB bandwidth of both LNA and PA are also exceeding 14 GHz. Both LAN and PA should be able to accommodate 9-GHz bandwidth requirement of IEEE802.15 WPAN application. A high performance PA and LNA are achieved with this backend process.
Keywords :
CMOS integrated circuits; low noise amplifiers; low-power electronics; personal area networks; power amplifiers; wideband amplifiers; wireless LAN; IEEE802.15 WAPN; LAN; LNA; LP CMOS technology; frequency 14 GHz; frequency 60 GHz; gain 13 dB; gain 9.8 dB; local area networks; noise figure 7 dB; size 90 nm; wideband power amplifiers; Bandwidth; CMOS technology; Frequency; Impedance matching; Local area networks; Noise measurement; Paper technology; Power generation; Reflection; Wideband;
Conference_Titel :
Compound Semiconductor Integrated Circuits Symposium, 2008. CSIC '08. IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-1939-5
Electronic_ISBN :
1550-8781
DOI :
10.1109/CSICS.2008.32