Title :
A New PT-Oxide-InALP-Based Schottky Diode Hydrogen Sensor
Author :
Yan-Ying-Tsai ; Cheng, Shiou-Ying ; Tsai, Yan-Ying ; Guo, Der-Feng ; Chen, Huey-Ing ; Liu, Wen-Chau
Author_Institution :
Nat. Cheng-Kung Univ., Tainan
Abstract :
A new Pt-InAlP metal-oxide-semiconductor (MOS) Schottky diode hydrogen sensor with high-sensitive hydrogen detection among wide operating temperature regime is demonstrated and studied. Experimentally, the studied hydrogen sensor can be operated systematically either under forward or reverse bias conditions. At 30degC, the relatively hydrogen detection ratio Sr value is increased from 108.8% (107.4%) to 943.1% (1337.3%), under the forward (reverse) bias of 0.3 V, when the hydrogen concentration is increased from 4.3 to 9970 ppm H2/air. In addition, it is worth to note that even an extremely low hydrogen concentration of 4.3 ppm H2/air can be effectively detected at the temperature of 30~250degC.
Keywords :
III-V semiconductors; MIS devices; Schottky diodes; aluminium compounds; gas sensors; hydrogen; indium compounds; platinum compounds; H2; Pt-Jk-InAlP; Schottky diode hydrogen sensor; forward bias condition; high-sensitive hydrogen detection; hydrogen concentration; metal-oxide-semiconductor sensor; reverse bias condition; temperature 30 C to 250 C; voltage 0.3 V; Chemical sensors; Fabrication; Gallium arsenide; Gases; Hydrogen; MOSFETs; Schottky barriers; Schottky diodes; Sensor systems; Temperature sensors; InAlP; hydrogen sensor; semiconductor-type;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International
Conference_Location :
Lyon
Print_ISBN :
1-4244-0842-3
Electronic_ISBN :
1-4244-0842-3
DOI :
10.1109/SENSOR.2007.4300566
