A New PT-Oxide-InALP-Based Schottky Diode Hydrogen Sensor

Author

Yan-Ying-Tsai ; Cheng, Shiou-Ying ; Tsai, Yan-Ying ; Guo, Der-Feng ; Chen, Huey-Ing ; Liu, Wen-Chau

Author_Institution

Nat. Cheng-Kung Univ., Tainan

fYear

2007

fDate

10-14 June 2007

Firstpage

2047

Lastpage

2050

Abstract

A new Pt-InAlP metal-oxide-semiconductor (MOS) Schottky diode hydrogen sensor with high-sensitive hydrogen detection among wide operating temperature regime is demonstrated and studied. Experimentally, the studied hydrogen sensor can be operated systematically either under forward or reverse bias conditions. At 30degC, the relatively hydrogen detection ratio S_r value is increased from 108.8% (107.4%) to 943.1% (1337.3%), under the forward (reverse) bias of 0.3 V, when the hydrogen concentration is increased from 4.3 to 9970 ppm H₂/air. In addition, it is worth to note that even an extremely low hydrogen concentration of 4.3 ppm H₂/air can be effectively detected at the temperature of 30~250degC.

Keywords

III-V semiconductors; MIS devices; Schottky diodes; aluminium compounds; gas sensors; hydrogen; indium compounds; platinum compounds; H₂; Pt-Jk-InAlP; Schottky diode hydrogen sensor; forward bias condition; high-sensitive hydrogen detection; hydrogen concentration; metal-oxide-semiconductor sensor; reverse bias condition; temperature 30 C to 250 C; voltage 0.3 V; Chemical sensors; Fabrication; Gallium arsenide; Gases; Hydrogen; MOSFETs; Schottky barriers; Schottky diodes; Sensor systems; Temperature sensors; InAlP; hydrogen sensor; semiconductor-type;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International

Conference_Location

Lyon

Print_ISBN

1-4244-0842-3

Electronic_ISBN

1-4244-0842-3

Type

conf

DOI

10.1109/SENSOR.2007.4300566

Filename

4300566