• DocumentCode
    3380298
  • Title

    Performance of P3HT/c-Si hybrid solar cell

  • Author

    Matsumoto, Yasuhiro ; Estrada, Magali ; Nolasco, Jairo C.

  • Author_Institution
    Electrical Engineering Department, Centro de Investigación y de Estudios Avanzados del IPN Av. IPN 2508 Zacatenco, Mexico City 07360, Mexico
  • fYear
    2008
  • fDate
    11-16 May 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The perfornmance of Au / P3HT (poly [3-hexylthiophene]) / n-type crystalline silicon (n-c-Si) / Al heterojuntion hybrid solar cells are presented. A P3HT layer with 80 nm thick was spin-coated on silicon substrate followed by thermal annealing and metal deposition. The capacitance-voltage measurements showed that the junction is abrupt. The conduction mechanism over temperature range from 300K to 360K is multi-step tunneling for medium voltage values from 0.2 V to 0.5V. Afterwards, the current-voltage characteristic is affected by a relatively high series resistance. The solar cell performance under 60mW/cm2 illumination was: VOC = 0.40 V, Isc = 10.0 mA/cm2, FF = 0.37 with the conversion efficiency of 2.46 %.
  • Keywords
    Annealing; Capacitance measurement; Capacitance-voltage characteristics; Crystallization; Electrical resistance measurement; Gold; Photovoltaic cells; Silicon; Temperature distribution; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
  • Conference_Location
    San Diego, CA, USA
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-1640-0
  • Electronic_ISBN
    0160-8371
  • Type

    conf

  • DOI
    10.1109/PVSC.2008.4922660
  • Filename
    4922660