DocumentCode :
3380298
Title :
Performance of P3HT/c-Si hybrid solar cell
Author :
Matsumoto, Yasuhiro ; Estrada, Magali ; Nolasco, Jairo C.
Author_Institution :
Electrical Engineering Department, Centro de Investigación y de Estudios Avanzados del IPN Av. IPN 2508 Zacatenco, Mexico City 07360, Mexico
fYear :
2008
fDate :
11-16 May 2008
Firstpage :
1
Lastpage :
4
Abstract :
The perfornmance of Au / P3HT (poly [3-hexylthiophene]) / n-type crystalline silicon (n-c-Si) / Al heterojuntion hybrid solar cells are presented. A P3HT layer with 80 nm thick was spin-coated on silicon substrate followed by thermal annealing and metal deposition. The capacitance-voltage measurements showed that the junction is abrupt. The conduction mechanism over temperature range from 300K to 360K is multi-step tunneling for medium voltage values from 0.2 V to 0.5V. Afterwards, the current-voltage characteristic is affected by a relatively high series resistance. The solar cell performance under 60mW/cm2 illumination was: VOC = 0.40 V, Isc = 10.0 mA/cm2, FF = 0.37 with the conversion efficiency of 2.46 %.
Keywords :
Annealing; Capacitance measurement; Capacitance-voltage characteristics; Crystallization; Electrical resistance measurement; Gold; Photovoltaic cells; Silicon; Temperature distribution; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
Conference_Location :
San Diego, CA, USA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-1640-0
Electronic_ISBN :
0160-8371
Type :
conf
DOI :
10.1109/PVSC.2008.4922660
Filename :
4922660
Link To Document :
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