Title :
100 Gbit/s Fully Integrated InP DHBT-Based CDR/1:2 DEMUX IC
Author :
Makon, R.E. ; Driad, R. ; Lösch, R. ; Rosenzweig, J. ; Schlechtweg, M.
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys. (IAF), Freiburg
Abstract :
In this paper, a 100 Gbit/s fully integrated clock and data recovery (CDR) circuit with 1:2 demultiplexer (DEMUX) is presented. The integrated circuit (IC) is realized using an in-house InP double heterostructure bipolar transistor (DHBT) technology exhibiting cut-off frequency values of more than 300 GHz for both fT and fmax. The CDR IC consists mainly of a half-rate linear phase detector including a 1:2 DEMUX, a loop filter, and a voltage controlled oscillator (VCO). A 100 Gbit/s data signal at the corresponding input of the CDR circuit gives rise to 50 Gbit/s recovered and demultiplexed output data featuring clear eye opening and a voltage swing of 500 mVpp. The extracted 50 GHz clock signal from the input data features a voltage swing of 250 mVpp, while the corresponding peak-to-peak (pp) and rms jitter amount to 2.1 ps and 0.5 ps, respectively. The full IC dissipates 2.1 W at a single supply voltage of -4.5 V.
Keywords :
demultiplexing equipment; heterojunction bipolar transistors; indium compounds; integrated circuits; phase detectors; synchronisation; voltage-controlled oscillators; CDR/1:2DEMUXIC; bit rate 100 Gbit/s; clock and data recovery circuit; cut-off frequency; demultiplexer; fully integrated DHBT; half-rate linear phase detector; in-house double heterostructure bipolar transistor; integrated circuit; jitter; loop filter; voltage controlled oscillator; Bipolar integrated circuits; Bipolar transistors; Clocks; Cutoff frequency; DH-HEMTs; Indium phosphide; Integrated circuit technology; Phase detection; Voltage; Voltage-controlled oscillators;
Conference_Titel :
Compound Semiconductor Integrated Circuits Symposium, 2008. CSIC '08. IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-1939-5
Electronic_ISBN :
1550-8781
DOI :
10.1109/CSICS.2008.36